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The optimization of passive devices is performed to contribute to the design of a linear 60 GHz Power Amplifier (PA). The difficulty in this design consists in the use of thin digital 7 metal layers (1P7M) Back End of Line (BEOL) and Low Power (LP) transistors dedicated for pure digital applications. In this context, compact inductors and Transmission lines (T-lines) are analyzed, measured and compared...
The analysis and optimization of millimeter-wave coupling structures are detailed to design a high-performance -band 65-nm CMOS parallel power amplifier (PA). The difficulty in this design consists of the use of a thin digital seven metal layer, back end of line, and low-power transistors dedicated to pure digital applications. In this context, two transformer-based power-combining schemes are compared...
Design and optimization of 65nm CMOS passive devices which are used in the implementation of a 60GHz Power Amplifier (PA) are presented. The targeted application is the low cost Wireless Personal Area Network (WPAN). A new optimized Radio Frequency (RF)-pad is used to minimize the losses of the PA access. The PA is matched via balun and Transmission Lines (T-Lines). T-Lines ensure both broadband inter-stage...
This paper presents the performance of 79GHz power amplifiers (PAs) for automotive short range radar (SRR) application. A single-ended four stage common emitter circuit topology and a differential PA with integrated baluns are fabricated using 0.13μm SiGe BiCMOS process. The design and the measured results of the monolithic integrated low-voltage PAs are reported. The 79GHz differential PA, which...
This paper presents the performance of 79 GHz power amplifiers (PAs) for automotive short range radar (SRR) application. A single-ended four stage common emitter circuit topology and a differential PA with integrated baluns are fabricated using 0.13 μm SiGe BiCMOS process. The design and the measured results of the monolithic integrated low-voltage PAs are reported. The 79 GHz differential PA, which...
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