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This paper presents a fully integrated ultra-wideband 3.1-10.6 GHz low noise amplifier (LNA) in a standard 0.25 mum SiGe BiCMOS process. The LNA circuit is a cascade topology with inductively degeneration transistor. A new input impedance matching network based on monolithic transformers was proposed to overcome to the problem of broadband matching without degrading the noise performance and power...
We present the design and implementation of a 5-6 GHz differential low noise amplifier (LNA) for WLAN applications. The LNA is fabricated in 0.25mum SiGe BiCMOS process from STMicroelectronics. By using on-chip transformers a broadband impedance matching (3.5-11 GHz), conversion between single-end and differential signals and smaller chip size are achieved. The LNA exhibits a small signal gain of...
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