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This study investigates the effects of inserting amorphous carbon (a‐C) layers between the Al electrode layer and the ZnO insulator layer in Al/ZnO/Al heterostructures on resistive switching (RS) therein. The inserted a‐C layers can play an important role to stabilize RS behavior for random access memory performance. The complex impedance spectra of Al/ZnO/Al devices with and without a‐C inserted...
Resistive‐switching (RS) random access memory (RRAM) has been attracting increased attention as the next‐generation nonvolatile memory. To make its reduction reversible in metal‐oxide based RRAM, some of studies use noble metal electrodes with a much higher electron affinity for the stable RS. On the other hand, amorphous carbon (a‐C), which is a tunable material with a mixture of sp2 and sp3 C, has...
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