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In this paper we report the progress on single quantum Hall devices for the resistance standards in NIM. We use the NIM-made device and the LEP-made device distributed to NIM by BIPM to calibrate a Tinsley 100 Ω transfer resistor using a cryogenic current comparator (CCC) at the filling factor k=2. The deviations of resistance values from the nominal value were −4.4808×10−6±3.5×10−9 by NIM-1 and −4...
Quantum Hall (QH) standard devices based on chemical vapor deposition (CVD) graphene have not shown properties as excellent as the one based on epitaxial graphene on SiC. This is because of the impurity, defects and inhomogeneity. In this paper, we demonstrate the progress on improving the quality of CVD graphene by the surface acidic processing and the low oxygen growth procedure.
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