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This paper discusses the key FinFET process and integration technologies to achieve high performance LSI. Firstly, side wall pattern transfer technique is introduced to realize an aggressively scaled down FinFET with 10 nm Fin width (Wfin) and 15 nm gate length (Lg). Next, dopant segregation (DS) Schottky technique is demonstrated to enhance the FinFET performance. Drive current of 960 muA/mum for...
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