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Using STM, we have investigated early stages of nanostructures formation upon room temperature (RT) deposition of 0.12 ML Ni onto Ag/Ge(111)-√3×√3 surface. While RT growth mode is determined by cluster formation, annealing up to 200°C promotes cluster nucleation. Further annealing results in creation of hexagonal-shaped islands which conserve on the surface in the unchanged form even after 800°C annealing...
Using STM, we have studied a mechanism of Co-2×2 island growth on Ag/Ge(111)-√3×√3 surface. The islands are found to have hcp structure and be oriented with (11–20) face. A model was inferred that the majority of them grow along [0001] crystallographic direction, which in STM images manifests itself by a lateral shift of Co atom rows in the topmost layer compared to that in underlying one.
Generally, the laser scribing was done after GaN-based light emitting diodes (LEDs) growth. This study verified that the utilization of laser scribing leads to an increase in the surface roughness of sapphire substrate sidewalls, which reduces the probability of total internal reflection from light striking the sapphire/air interface. Laser scribing also helps increase side light extraction intensity...
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