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This paper reports the successful growth and characterization of thin film transistors based on MOCVD (metalorganic chemical vapor deposition) grown ZnO with best so ever reported performance. Highly conducting (<;0.01Ωcm) p-type (111) silicon substrates were used to achieve a low resistive backside gate. A thin, 20 nm dielectric SiO2 layer was then deposited by PECVD. A modified Aixtron 200/4...
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