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Transport mechanisms in nanocrystalline ZnO Thin Film Transistors (TFT) were investigated in a wide temperature range. The channel is located at the ZnO–SiO 2 interface and controlled with a bottom gate as in a back-channel SOI MOSFET. In this work, we propose suitable mobility models that are able to provide a good agreement with the experimental results. Not only do these models account...
Thin films of spontaneously ordered and closely packed 20‘-’50nm diameter nanocolumns of ZnO were used to fabricate high speed and transparent thin film transistors (TFT). The use of nanocrystalline ZnO (nc-ZnO) helps to achieve the intrinsic electronic properties of single crystals while providing substrate agnostic thin films that can be grown on non-planar surfaces of rigid or flexible substrates...
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