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The influence of random telegraph noise (RTN) in MOSFETs on drain current (Id) during transition edge of pulse gate voltage (Vg) was investigated. The Id fluctuation under dynamic Vg was larger than that under de bias by a factor of 2.2. We have revealed that the initial trap occupation states before varying Vg significantly affect the Id values during the transition edge of dynamic Vg. The trap occupation...
The impact of current fluctuation due to discreteness in carrier numbers on high-frequency noise amplitudes is numerically investigated, focusing on the comparison to the impact of a single trapped charge in the oxide layer for gate-all-around nanowire structures. The variation in the amount of the charge transporting through the channel within a single clock cycle is estimated. The transported charge...
We have revealed that the dynamic fluctuation in time, i.e., noise, of drain current (Id) is closely related to the static variability. The current conduction mechanism such as diffusion and drift transports is a key to consistently understand the magnitude of not only the noise from a single transistor but also the static variability obtained from a number of transistors. The magnitude of fluctuation...
We have successfully characterized the dynamical fluctuation of electrical potential due to random telegraph noise (RTN) using MOSFETs with extra terminals for potential sensing. Among some cases of potential changes, devices with clear response in the extra terminals were analyzed in detail. It was found RTN can cause the potential fluctuation in the entire channel region. The magnitude of the fluctuation...
We studied the impact of Yttrium and Lanthanum incorporation into HfO2 on reliability (TDDB, PBTI and 1/f noise). They introduce smaller Weibull ?? values and early failure in TDDB, with negative shift in PBTI. They are caused by the negatively charged interstitial oxygen defect generated by Yttrium and Lanthanum incorporation. The effect of Lanthanum is larger than that of Yttrium. It can be explained...
We clarified the impact of the fifth material incorporation into HfSiON technology for Vth control on the reliability of high-k/metal gate stacks CMOSFETs. HfMgSiON is remarkably effective for suppressing electron traps, giving rise to a dramatic PBTI lifetime improvement for nMOSFETs. With pMOSFETs, Al incorporation is effective for the thermal deactivation of hole traps, resulting in NBTI lifetime...
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