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In this work, we depart from the cell-based percolation model of gate dielectric breakdown (BD) to propose analytical models for the SET and RESET statistics in resistive switching memory (RRAM). The SET or RESET statistics model consists of two basic elements: (i) a cell-based geometrical model to describe the dependence of the resistive switching (RS) distribution on the defect generation in the...
1T1R-architecture devices were fabricated by integrating ZrO2 based crossbar structure ReRAM onto a foundry-built MOSFET platform. Multilevel operation was realized by using the current limit of a selected cell transistor in the set process. The current level was determined by the transistor's gate voltage, resulting in the control of electrical resistance of the filamentary conductive paths in the...
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