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In this paper, electron mobility (μ<;sub>e<;/sub>) and hole mobility (μ<;sub>h<;/sub>) of (110) nFETs and pFETs are studied, respectively. It is demonstrated that, because of the non-parabolicity along <;110>, the conventional effective mass model is insufficient to accurately evaluate the quantum confinement effects in (110) nFETs..
The band structures and carrier transport in (110) pFETs are thoroughly studied over a wide temperature range under high magnetic fields. In (110) pFETs, the degenerate hole bands in bulk Si are separated into the higher energy band (H band) and the lower energy band (L band). The energy difference between these bands is experimentally evaluated. The effective masses of each band are directly obtained...
Progresses in the development of the TFA-MOD process for the coated conductors in Japan are reviewed. In the fundamental approaches, some important advantages of Ba-poor starting solution were found such as for obtaining higher Jc, shorter reaction time and wider process temperature window. The high Ic value of 735 A/cm-w@77 K was attained. Additionally, introduction of artificial pinning centers...
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