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80nm InAs/In0.7Ga0.3As HEMTs using Pt gate sinking were characterized for ultra-low power low noise applications. While the epitaxial structure of the device was optimized, the reduction of gate-to-channel distance was achieved from gate sinking process. The device exhibited very high drain current density of 1066 mA/mm and maximum gm of 1900 mS/mm at Vds = 0.5 V. Excellent fT (fmax) up to 113 GHz...
80-nm high electron mobility transistors (HEMTs) with different indium content in InxGa1-xAs channel from 52%, 70% to 100% have been fabricated. Device performance degradation were observed on the DC measurement and RF characteristics caused by impact ionization at different drain bias, >0.8 V (InAs/In0.7Ga0.3As), >1 V (In0.7Ga0.3As) and >1.5 V (In0.52Ga0.48As), respectively. The impact ionization...
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