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Improvement on the RF and noise performance for 80nm InAs/In 0.7 Ga 0.3 As high-electron mobility transistor (HEMT) through gate sinking technology is presented. After gate sinking at 250°C for 3min, the device exhibited a high transconductance of 1900mS/mm at a drain bias of 0.5V with 1066mA/mm drain–source saturation current. A current-gain cutoff frequency (f T ) of 113GHz...
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