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The nanoscale (EOT<;6 nm) flash and resistive switching memories using IrOx nanocrystals have been investigated. The IrOx nanocrystals embedded in high-κ Al2O3 film are observed by both high-resolution transmission electron microscopy and x-ray photoelectron spectroscopy. The average size and density of IrOx nanocrystals are found to be ~3 nm and ~7×1012/cm2, respectively. The flash memory devices...
Low current/voltage (1 nA/1.3V) operation of resistive switching memory device using Cu metallic filament in Ge0.2Se0.8 solid-electrolyte has been investigated. This resistive memory device have a large resistance ratio of > 10 at 1 nA current compliance, good endurance of ~105 cycles, and good data retention with a current of 1 nA up to 2×103 seconds. The low resistance state decreases with increasing...
Bipolar resistive switching memory device using high-kappa Ta2O5 solid electrolyte in a Cu/Ta2O5/W structure with the device sizes from 0.2-8 mum was investigated. This resistive memory device has a high threshold voltage of 0.75 V, high resistance ratio (RHigh/RLow) of 3times103, good endurance of > 103, and excellent retention at 150degC. The memory device with a low current operation of 5 pA...
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