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Novel bi-layered solid electrolytic based resistive switching memory device using Al/Cu/Ge0.2Se0.8/Ta2O5/W structure has been investigated for the first time. The tight distribution of resistance states and threshold voltage are achieved as compared to that of single layer Ge0.2Se0.8 solid-electrolyte. Stable endurance of ≫3.5×105 cycles and excellent retention characteristics with a low compliance...
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