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Current Si-CMOS technology has come to a limit that novel semiconductors as alternative channel materials (Ge, InSb, InxGa1-xAs) are urgently needed for high-speed and low-power logic devices for post CMOS era. Recent research shows III-V heterostructure field-effect transistors demonstrate aggressive merits due to its high electron mobility and rather mature process technology. The outstanding low...
Eighty-nanometer-gate In0.7Ga0.3As/InAs/In0.7Ga0.3As composite-channel high-electron mobility transistors (HEMTs), which are fabricated using platinum buried gate as the Schottky contact metal, were evaluated for RF and logic application. After gate sinking at 250degC for 3 min, the device exhibited a high gm value of 1590 mS/mm at Vd = 0.5 V, the current-gain cutoff frequency fT was increased from...
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