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High performance MHEMTs using (InxGa1-xAs)m/(InAs)n superlattice structure as a channel layer have been fabricated successfully. These HEMTs with 80 nm gate length exhibit high drain current density of 392 mA/mm at drain bias 1.0 V and transconductance of 991 mS/mm at drain bias 1.2 V. Comparison with regular InxGa1-xAs channel, the superlattice channel HEMTs show an outstanding performance because...
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