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A novel three-dimensional packaging method for Al-metalized SiC power devices has been developed by means of Au stud bumping technology and a subsequent vacuum reflow soldering process with Au-20Sn solder paste. Al-metalized electrodes of a SiC power chip can be robustly assembled to a direct bonded copper (DBC) substrate with this method. The bump shear strength of a Au stud bump on an Al electrode...
The tendency of high efficiency and high power density of power inverters needs three-dimensional (3-D) packaging techniques for power module packaging. In a 3-D power device packaging, it is necessary to bond electrodes to a substrate or other chips by solders. However, the "upper" electrodes of most power devices are metalized with Al and are very difficult to be directly bonded to a substrate...
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