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The diode stackup has been used as on-chip electrostatic discharge (ESD) protection for some applications in which the input/output signal swing is higher than ${\rm V}_{\rm DD}$ or lower than ${\rm V}_{\rm SS}$. A novel ESD protection structure of diode stackup is proposed for effective on-chip ESD protection. Experimental results in 65-nm CMOS process show that the optimization on layout style...
Low capacitance (low-C) design on ESD protection device is a solution to mitigate the radio-frequency (RF) performance degradation caused by electrostatic discharge (ESD) protection device. Silicon-controlled rectifier (SCR) device has been used as an effective on-chip ESD protection device in RF ICs due to the smaller layout area and small parasitic capacitance under the same ESD robustness. In this...
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