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Ga-doped zinc oxide (GZO) thin films had been deposited by DC magnetron sputtering method at high argon (Ar) gas pressure and 250℃ temperature on glass substrates. The Ar sputtering pressure was varied between 12.1 and 12.9 Pa. The results indicated the GZO thin films had a hexagonal wurtzite structure and highly C-axis preferred out-of-plane orientation. As the Ar gas pressure increased,the GZO films...
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