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Raman coherence between heavy-hole and light-hole excitons in quantum wells is isolated in an alternative spectrum and contributions from single exciton and correlated two-exciton states are studied experimentally and theoretically by excitation with different polarizations.
Homogeneous and inhomogeneous broadening of heavy- and light-hole excitons in semiconductor quantum wells are measured along with the excitation dependence of both broadenings. Isolation of disorder-induced broadening is possible with spectra in different coherent pathways.
Short pulses detuned below the absorption edge of GaAs quantum wells are used to rotate electron spins through a Raman process. Faraday rotation measurements demonstrate significant rotations with negligible excitation of electrons and holes.
We investigate coherent excitonic coupling in asymmetric double quantum wells with varying barrier thickness using optical two-dimensional Fourier transform spectroscopy. The coupling is isolated and characterized as cross peaks in two-dimensional spectra.
Spin gratings lasting longer than the carrier lifetime are measured in lightly n-doped quantum wells. In a magnetic field, precession of the grating is observed, and diffusion rates are determined by varying the grating period.
Spectral study of Kerr rotation is performed for quantum wells with different doping. Lightly doped sample shows excitonic enhancement of electron spin polarization. The presence of holes enhances electron spin relaxation in highly doped samples.
Two-dimensional Fourier-transform optical spectroscopy is demonstrated on GaAs quantum-wells. The signal is measured phase coherently with respect to the evolution time, enabling Fourier analysis. Coupling between heavy and light hole excitons yields cross-peaks
The spin precession of electrons in a GaAs quantum well is controlled by the presence of an electron gas, which is produced in a neighboring quantum well with a transition resonant with a HeNe laser
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