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Characteristics of displacement defects in n-p-n bipolar junction transistors (BJTs) caused by heavy ions with various nonionizing energy loss (NIEL) values are studied in this paper. The key electrical parameters are measured in situ during irradiation. Behavior of the radiation-induced defects is characterized by deep level transient spectroscopy (DLTS) after the irradiation and the postirradiation...
Based on 70 keV, 170 keV protons and 5 MeV protons, the interaction between oxide charge and displacement defects in 3DG112 NPN bipolarjunction transistors (BJTs) was investigated. Both ionization and displacement damage can result in the current gain degradation of BJTs. The degradation of the transistor varies linearly with increasing the irradiation fluence for 170 keV and 5MeV protons but nonlinearly...
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