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NAND flash memory is widely used as a cost-effective storage with high performance [1–2]. This paper presents a 128Gb multi-level cell (MLC) NAND flash memory with a 150 cells/string structure in 14nm CMOS that can be used as a cost-effective storage device. This paper also introduces several approaches to compensate for reliability and performance degradations caused by the 14nm transistors and the...
In the CMOS technology, silicon rounding technique is often an essential part of fabrication. There have been some studies about hydrogen annealing process in a silicon fin. But the previous studies have been done in relatively large silicon fins (200 nm ~ 1 mum). In this study, effect of hydrogen annealing in a nanoscale fin (30 nm ~ 100 nm) is investigated. There is significant difference between...
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