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In this paper, we present the extraction of oxide traps properties of n-metal-oxide-semiconductor (N-MOS) field effect transistors with W×L=0.5×0.1μm 2 using low-frequency (LF and random telegraph signal) noise and static I(V) characterizations. The impact of oxide thickness, on static and noise parameters is analyzed. Static measurements on N-MOS devices with different tunnel oxide thickness...
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