The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We have presented the results of the deep level transient spectroscopy (DLTS) study of the electron-radiation-induced defects in n-type InAsxP1-x/InP MQWs solar cell structures. Irradiation of CBE grown n-type InAsxP1-x/InP by 1 MeV electron with a dose of 3times1016 cm-2 results in the appearance of a dominant electron emitting level E1, in the upper half of the band gap. The level E1 shows striking...
Power conversion in a thermophotovoltaic (TPV) or any other photovoltaic device can be increased by implementing monolithically series connected multibandgap structure in the device. The main concern for the multi-band gap device is the availability of different band gaps for the optimal operation of the device. Based on the recent work, GaAsN/InAsN superlattice lattice matched to InP has shown the...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.