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Amorphous selenium (a-Se) alloy materials doped with lithium (Li), boron (B), arsenic (As), and chlorine (Cl), were synthesized for room temperature radiation detection applications using an optimized alloy composition for enhanced charge transport properties. A two-step synthesis process has been implemented to first synthesize the a-Se (As) and a-Se (Cl) master alloys from zone-refined Se (∼7N),...
InSe thin films were deposited by thermal evaporation of polycrystalline InSe onto the sulfur passivated p-GaTe:In substrates at 450K–550K to fabricate improved p-GaTe:In/n-InSe heterojunction solar cells. Dark J-V measurements showed that the reverse saturation current density decreased from 4 × 10−6 A/cm2 to 2 × 10−9 A/cm2 and the ideality factor was reduced from 2.04 to 1.12 as a result of surface...
Cu2ZnSnS4 (CZTS) thin films have been deposited on soda-lime glass (SLG) and Mo-coated SLG substrates using a low-cost spray pyrolysis technique followed by sulfurization under H2S flow at 540°C. Aqueous solution containing CuCl, ZnCl2, SnCl4 and thiourea was used as precursor. Spray deposition was carried out at three different substrate temperatures of 280°C, 360°C and 440°C. Deposition conditions...
Radiation detectors were fabricated on 8 mm × 8 mm substrates, ~ 390 μm in thickness, diced from (0001) 4H-SiC semi-insulating (SI) wafer (≥ 1012 Ohm-cm). Our results on characterization including x-ray diffraction (XRD), electron beam induced current (EBIC), chemical etching, cross-polarized imaging, and Raman spectroscopy show the high quality of the SI SiC crystals, which are believed to meet the...
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