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A fully integrated dual-band (868/915 MHz and 2.4 GHz) low-noise amplifier is designed using 0.18 m RFCMOS technology for ZigBee development. In both bands, achieved gains are better than 15 dB and the resulting noise figures are better than 2.0 dB. The input and the output reflections are measured to be better than 10 dB in both bands. By tuning varactors in input and output LC tanks, frequency drifts...
In this paper, a SiGe BiCMOS power amplifier has been designed, showing the competitive performance compared to GaAs HBT. The 2.4 GHz power amplifier realized in IBM 0.35 mum SiGe BiCMOS technology. As shown in Fig.5, under high power mode, the measured gain is 24 dB and the input return loss Sn is better than -15 dB, the output return loss S22 is ~9.6 dB at 2.45 GHz. The PA exhibits PidB of 24.1...
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