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A complete microwave characterization of the small-signal properties in terms of S-parameters behaviors of a flip-chip triode geometry device has been studied with CST simulator. The simulation results of a single triode and 10times10 triode array have been proposed.
In this paper the extraction of series resistances for high-speed InP DHBT devices is investigated. Known extraction methods based on measured S-parameters are reviewed and error terms are identified. A novel method for intrinsic collector resistance extraction is proposed. The method is based on S- parameters measured in saturation and forward active regions. The results are applied to the large-signal...
We present design of a 200 GHz frequency multiplier based on commercially available Schottky diodes. The device model has been extracted from millimeter-wave small-signal S-parameter measurements. The frequency multiplier is fully planar on alumina substrates. The resulting conversion efficiency is 18.9% at 96 GHz input frequency. The multiplier is contacted with the help of especially designed CPW...
An uncertainty estimation and sensitivity analysis is performed on multi-step de-embedding for SiGe HBT small-signal modeling. The uncertainty estimation in combination with uncertainty model for deviation in measured S-parameters, quantifies the possible error value in de-embedded two-port parameters (Y and Z - parameters). The analysis is applied to a 0.35 /spl mu/m 60 GHz f/sub T/ SiGe HBT in frequency...
It is demonstrated that microwave structures incorporating dielectric resonators (DR) are accurately characterised by means of a 3-dimensional finite-difference CAD package. All major assumptions made so far have been dropped, offering the possibility of a rigorous analysis of the embedding of dielectric resonators into microwave structures. In particular, a finite thickness for the microstrip conductor...
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