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This paper presents an active up-converter realized as hetero-integrated module in InP-on-BiCMOS technology. It consists of a fundamental Voltage Controlled Oscillator (VCO) in 0.25 μm BiCMOS technology and a frequency multiplier followed by double balanced Gilbert mixer cell in 0.8 μm transferred substrate (TS) InP-HBT technology, which is integrated on top of the BiCMOS MMIC. The fundamental VCO...
A 315-GHz reflection-type push-push oscillator is presented. It is realized using a 0.8 μm-emitter transferredsubstrate (TS) InP-DHBT technology with an fmax of 320 GHz. The oscillator delivers −10 dBm output power. DC consumption is only 21 mW from a 1.6 volts power supply, which corresponds to 0.5 % overall DC-to-RF efficiency.
This paper presents a wideband 330 GHz frequency quadrupler using 0.8 µm transferred substrate (TS) InP-HBT technology. The process includes a heat-spreading diamond layer, which improves the power handling capability of the circuit. The quadrupler delivers −7 dBm output power at 325 GHz, at a DC consumption of only 40 mW, which corresponds to 0.5 % of efficiency. It achieves 90 GHz bandwidth and...
This paper presents a 330 GHz hetero-integrated signal source using InP-on-BiCMOS technology. It consists of a fundamental Voltage Controlled Oscillator (VCO) in 0.25 µm BiCMOS technology and a frequency quadrupler in 0.8 µm transferred substrate (TS) InP-HBT technology, which is integrated on top of the BiCMOS MMIC in a wafer-level BCB bonding process. The fundamental VCO operates at 82 GHz and the...
A 270-GHz reflection-type push-push oscillator is presented, realized using 0.8µm emitter InP-DHBTs. The InP DHBT-on-BiCMOS offers both InP HBT and BiCMOS technologies but in this case only the InP part is used. The transistors exhibit a maximum oscillation frequency fmax of 300 GHz. The oscillator delivers −9.5 dBm output power. DC consumption is only 31 mW from a 1.8 volts power supply, which corresponds...
A 197-GHz fixed-frequency fundamental oscillator with high efficiency is presented, realized using a transferred-substrate InP-DHBT process. It delivers 0 dBm output power, with a phase noise of −88 dBc/Hz at 1.6 MHz offset frequency. DC consumption is only 22 mW from a 1.4 volts power supply, which corresponds to the highest overall DC-to-RF efficiency of a millimeter-wave frequency source reported...
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