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A single-ended frequency doubler in transferred-substrate (TS) InP-DHBT technology is presented with state-of-the-art results. A maximum output power of 4 dBm and 9.6 dB conversion loss at 180 GHz is achieved with on-wafer measurements. An optimum conversion loss of 5.4 dB is realized with an output power of −3.4 dBm for the same frequency. The DC power consumption is 36 mW under saturated conditions...
A single-ended frequency doubler in transferred-substrate (TS) InP-DHBT technology is presented with state-of-the-art results. A maximum output power of 4 dBm and 9.6 dB conversion loss at 180 GHz is achieved with on-wafer measurements. An optimum conversion loss of 5.4 dB is realized with an output power of −3.4 dBm for the same frequency. The DC power consumption is 36 mW under saturated conditions...
We present design of a 200 GHz frequency multiplier based on commercially available Schottky diodes. The device model has been extracted from millimeter-wave small-signal S-parameter measurements. The frequency multiplier is fully planar on alumina substrates. The resulting conversion efficiency is 18.9% at 96 GHz input frequency. The multiplier is contacted with the help of especially designed CPW...
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