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As tri-gate transistor technologies continue to scale to smaller dimensions, a variety of aging mechanisms become important to include in models to accurately predict end-of-life transistor performance. Traditional aging effects such as BTI and hot carrier continue to play a role. However, modeling these mechanisms becomes more complicated with the addition of recovery, variation, and local self-heating...
MOSFET reliability data are often represented as a function of gate overdrive (VG–VT) with the implicit assumption that overdrive is the appropriate normalizing parameter. While this can be true for some specific sources of variation, reliability does not necessarily track gate overdrive. This paper explores systematic and random sources of variation in TDDB, BTI, and hot carrier degradation data...
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