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A room-temperature negative characteristic temperature (T0 ) and ultralow threshold current density (Jth) of 48 Amiddotcm-2 are demonstrated for a 1.3-mum InAs quantum dot laser. These characteristics are obtained by combining a high-growth-temperature GaAs spacer layer with p-type modulation doping of the quantum dots in multiple layer dot-in-a-well structures. Through a comparison of p-doped and...
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