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A new back-illuminated uni-traveling-carrier photodiode (UTC-PD) is designed for long-wavelength applications in this paper. This device design incorporates dual absorption regions with conventional UTC-PDs, simultaneously by adopting a cliff layer in the collection layer to obtain high efficiency and high speed. Theoretical and simulation study indicate that the responsivity of the 14 µm2 active...
GaAs/InGaAs/GaAs core-multishell nanowire heterostructure with a thin InGaAs quantum well is fabricated. Photoluminescence of the quantum well exhibits a blue shift along the nanowire due to the difference of diffusion length between In and Ga.
A grating-integrated silicon-on-insulator (SOI)-based photodetector for use in the long wavelength was fabricated and characterized. An InGaAs/InP p-i-n structure was heterogeneously integrated on an SOI-based concentric circular subwavelength grating (CC-SWG) by means of a low-temperature bonding process with benzocyclobutene as the bonding agent. The light absorption of the device is enhanced due...
We have designed and fabricated a RCE dual-absorption photodetector. In comparison with conventional ones, our design possesses higher quantum efficiency without imparing other optical properties of the device. In addition, its high speed properties can be obtained.
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