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Stacks of different quantum dot (QD) structures were adopted and characterized for broadband superluminescent diodes (SLDs). Each QD structure in the stacked QD structures exhibited a unique peak in the photoluminescence (PL) spectrum, showing ground-state peaks of ∼1272, ∼1185 and ∼1090 nm for InGaAs-capped InAs QDs, InAs QDs, and InGaAs QDs, respectively. Two SLD structures, one with the stack of...
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