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We report the complex pseudodielectric function < ε > = < ε1 > + i < ε2 > of an oxide-free AlSb film for energies from 0.7 to 5.0 eV and temperatures from 300 to 803 K. The 1.5-μm-thick film was grown on a (001) GaAs substrate by using molecular beam epitaxy. We maintained the film in an ultrahigh vacuum to prevent oxidation artifacts and used a rotating-compensator ellipsometer...
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