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(Ti,Cr,Al,Si)N films were deposited by cathodic arc method using TiCrAlSi alloy cathodes. It was found that the microstructures of (Ti,Cr,Al,Si)N were closely related to (Al+Si) content. The crystal structure of (Ti,Cr,Al,Si)N was NaCl-type structure up to the (Al+Si) content of 0.60, where it changed to a hexagonal structure. The maximum hardness of 33GPa was obtained at the lowest (Al+Si) content...
A rigorous theoretical analysis of the band-edge photoluminescence efficiency (Y PL ) versus excitation intensity (Φ) and surface Fermi level (E F0 ) was performed for n-type InP(100) surfaces. A strong influence of the surface state density (N SS ) and band bending (field-effect passivation) on the Y PL (Φ) spectra was found. Furthermore, the electronic...
Rigorous computer simulations of the dependence of the band-to-band photoluminescence quantum efficiency (Y PL ) were performed for n-type InP surfaces in a wide range of excitation light intensity, Φ (from 10 18 to 10 25 cm -2 s -1 ). A strong influence of the density of surface states (N SS ) and their capture cross sections...
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