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The next step to confirm the MESFET's ability to handle extreme environments will be testing the buck regulator in the presence of radiation. These measurements will be completed in the coming month and the results presented at the conference. Eventually the goal will be to integrate the MESFET with the feedback circuitry and to more carefully design the buck regulator board, choosing components that...
With these promising preliminary results, the next phase is to complete a fully integrated design similar to that in [1] on the 150nm SOI CMOS process. Ideally the performance will improve with respect to the transient responses and Ignd since the error amplifier can be optimally designed for the needs of the MESFET LDO.
Fully integrated MESFETs have been shown to work on multiple commercial silicon-on-insulator (SOI) and silicon-on-sapphire (SOS) CMOS processes without changing a step in the process flow. The unique features of the MESFET including depletion mode operation, breakdown voltages in excess of 50 V, and easy to adjust, but well controlled threshold voltages have given the designers a cost-free way to...
The rapid growth in portable electronics has driven the market for ultra low dropout regulators (LDOs) that are more power efficient and lead to longer battery lifetime. Over the years various topologies based on P- or N-channel pass transistors have been introduced to meet these demands. For each of these implementations, the LDO has had a significant disadvantage whether it is stability issues and...
Conductance measurement of single ion channels and related stochastic signals is a promising technique for the development of a functional biosensor. We present results showing that silicon substrates can be used as a low noise, universal platform for recording the electrical activity of single ion channels inserted into bilayer membranes. Bilayers were suspended on polytetrafluoroethylene coated,...
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