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Fully integrated MESFETs have been shown to work on multiple commercial silicon-on-insulator (SOI) and silicon-on-sapphire (SOS) CMOS processes without changing a step in the process flow. The unique features of the MESFET including depletion mode operation, breakdown voltages in excess of 50 V, and easy to adjust, but well controlled threshold voltages have given the designers a cost-free way to...
The rapid growth in portable electronics has driven the market for ultra low dropout regulators (LDOs) that are more power efficient and lead to longer battery lifetime. Over the years various topologies based on P- or N-channel pass transistors have been introduced to meet these demands. For each of these implementations, the LDO has had a significant disadvantage whether it is stability issues and...
Ultrathin channel metal-semiconductor field-effect-transistors (MESFETs) have been fabricated using fully depleted silicon-on-insulator CMOS foundries with no changes to the process flow. The Schottky gate of the MESFET is formed from a metal silicide that consumes most of the thin ( < 50 nm) FD-SOI channel and fully depletes the remaining underlying silicon. Therefore, unlike partially depleted...
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