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Trap generation under BTI/TDDB stress for extremely scaled NMOSFETs and PMOSFETs is investigated. Trap identification and localization using SILC Spectrum technique is demonstrated. It has been verified that BTI/TDDB stress leads to trap generation primarily at IL/HK intermix for PMOSFETs, and primarily at HK layer in case of NMOSFETs. The advantage of this technique is it requires minimal post measurement...
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