Search results for: Min Sang Park

Items from 1 to 20 out of 35 results

article

84‐5: Late‐News‐Paper: Flexible Cover Window Film with Improved Optical Clarity

Min Sang Park, Sun Kug Kim, Sangyoon Park, Ho Chul Yoon, more

SID Symposium Digest of Technical Papers > 51 > 1 > 1276 - 1278

SK Innovation and SK ie technology have developed and commercialized cover window films (FCW^®) composed of functional coatings on transparent polyimide (PI) film for a foldable displays. We report on the development of PI film with high visual clarity, which can provide glass‐like feel to public users. Advances were achieved by engineering drying kinetics on the process of film fabrication, and the...

article

60‐4: Mechanically Robust High‐Performance Flexible Oxide TFTs with Imbedded Buried CNT Electrode for Bendable Displays

Mohammad Masum Billah, Min Sang Park, Jewel Kumer Saha, Md Mehedi Hasan, more

SID Symposium Digest of Technical Papers > 49 > 1 > 800 - 803

We demonstrate highly robust flexible a‐IGZO thin‐film transistors (TFTs) with imbedded carbon nano‐tube (CNT) buried electrode (BE) in between polyimide (PI) substrate. The excellent mechanical durability of flexible TFTs on thin wrinkle‐free and the self‐standing PI substrate with imbedded CNT BE has been demonstrated. The strain on the TFT can be reduced by the imbedded CNT electrode which is calculated...

article

Cu–SnO2 nanostructures obtained via galvanic replacement control as high performance anodes for lithium-ion storage

Tuan Loi Nguyen, Duckshin Park, Jaehyun Hur, Hyung Bin Son, more

Applied Surface Science > 2018 > 429 > C > 218-224

SnO₂ has been considered as a promising anode material for lithium ion batteries (LIBs) because of its high theoretical capacity (782mAhg⁻¹). However, the reaction between lithium ions and Sn causes a large volume change, resulting in the pulverization of the anode, a loss of contact with the current collector, and a deterioration in electrochemical performance. Several strategies have been proposed...

article

Highly permeable and mechanically durable forward osmosis membranes prepared using polyethylene lithium ion battery separators

Soon Jin Kwon, Sang-Hee Park, Min Sang Park, Jong Suk Lee, more

Journal of Membrane Science > 2017 > 544 > C > 213-220

A porous polyethylene (PE) membrane commercialized as a lithium ion battery separator was utilized as a support for the fabrication of a highly permeable and mechanically durable thin film composite (TFC) forward osmosis (FO) membrane. The highly open and interconnected pore structure of the PE support combined with its thin thickness (~8µm) is beneficial for mitigating internal concentration polarization,...

article

Copper–antimony–red phosphorus composites as promising anode materials for sodium-ion batteries

Yoo Seok Mun, Younghoon Yoon, Jaehyun Hur, Min Sang Park, more

Journal of Power Sources > 2017 > 362 > C > 115-122

A novel phosphorus-based alloy composite, Sb–CuP₂–C, is synthesized by a simple two-step high-energy ball milling (HEBM) method and used as an anode material for sodium-ion batteries. The HEBM process with Sb, Cu, P, and C generates Sb and CuP₂ phases instead of forming Cu₂Sb and P owing to the differences in binding energy among the elements, which is confirmed by density functional theory. The as-prepared...

article

Mechanism of sodium adsorption on N-doped graphene nanoribbons for sodium ion battery applications: A density functional theory approach

Hong Woo Lee, Hye Sook Moon, Jaehyun Hur, Il Tae Kim, more

Carbon > 2017 > 119 > C > 492-501

Density functional theory (DFT) calculations were employed to investigate the adsorption and diffusion mechanisms of sodium on graphene nanoribbons (GNR). The calculated adsorption energy in the edge region (−1.096 eV) of pristine GNR was lower than that for the center region (−0.836 eV). In addition, the adsorption energies on GNRs with nitrogen-doped defects (4ND, 3NV, and pyrrolic: −3.794 to −1...

article

A 1.2 V 20 nm 307 GB/s HBM DRAM With At-Speed Wafer-Level IO Test Scheme and Adaptive Refresh Considering Temperature Distribution

Kyomin Sohn, Won-Joo Yun, Reum Oh, Chi-Sung Oh, more

IEEE Journal of Solid-State Circuits > 2017 > 52 > 1 > 250 - 260

A 1.2 V 20 nm 307 GB/s high-bandwidth memory (HBM) DRAM is presented to satisfy a high-bandwidth requirement of high-performance computing application. The HBM is composed of buffer die and multiple core dies, and each core die has 8 Gb DRAM cell array with additional 1 Gb ECC array. At-speed wafer level, a u-bump IO test scheme and an adaptive refresh scheme considering temperature distribution are...

chapter

18.2 A 1.2V 20nm 307GB/s HBM DRAM with at-speed wafer-level I/O test scheme and adaptive refresh considering temperature distribution

Kyomin Sohn, Won-Joo Yun, Reum Oh, Chi-Sung Oh, more

2016 IEEE International Solid-State Circuits Conference (ISSCC) > 316 - 317

2016 IEEE International Solid-State Circuits Conference (ISSCC)

Demand for higher bandwidth DRAM continues to increase, especially in high-performance computing and graphics applications. However, conventional DRAM devices such as DDR4 DIMM and GDDR5 cannot satisfy these needs since they are bandwidth limited to less than 30GB/s. Also, if multiple GDDR DRAMs are used simultaneously for higher bandwidth, then high power consumption and routing congestion on PCBs...

article

Reliability study of methods to suppress boron transient enhanced diffusion in high-k/metal gate Si/SiGe channel pMOSFETs

Min Sang Park, Yonghyun Kim, Kyong Taek Lee, Chang Yong Kang, more

Microelectronic Engineering > 2013 > 112 > Complete > 80-83

The effects of extension profile engineering to suppress boron transient enhanced diffusion (TED) are investigated in Si/SiGe channel metal–oxide–semiconductor field-effect transistor (MOSFET). In performance, Ge pre-amorphization implantation (PAI) samples exhibit low drain-induced barrier lowering (DIBL) and a good I _on /I _off ratio due to suppressed boron diffusion. In reliability,...

chapter

An Investigation of Abnormal Program Phenomena with S/D Junctions and Dopant Profiles for Sub-20 nm NAND Flash Memory Devices

Byoungjun Park, Sunghoon Cho, Jiyul Park, Pyunghwa Kim, more

2012 4th IEEE International Memory Workshop > 1 - 4

2012 4th IEEE International Memory Workshop (IMW)

In this paper, we discuss about the abnormal program phenomena of sub-20 nm NAND Flash memory devices based on floating gates. These phenomena are varied with the doping concentration and isolations. In sub-20 nm NAND technology, the optimized S/D junction and well-controlled dopant profiles under channel should be adopted to improve reliability characteristics.

article

A comparative study of depth profiling of interface statesusing charge pumping and low frequency noise measurement in SiO2/HfO2 gate stack nMOSFETs

Kyong Taek Lee, Chang Yong Kang, Hyun-Sik Choi, Seung-Ho Hong, more

Microelectronic Engineering > 2011 > 88 > 12 > 3411-3414

Charge pumping and low frequency noise measurements for depth profiling have been studied systematically using a set of gate stacks with various combinations of IL and HfO ₂ thicknesses. The distribution of generated traps after HCI and PBTI stress was also investigated. The drain-current power spectral density made up all of the traps of IL in 0<z<T _IL and the traps of HfO ...

article

Conducting Channel Formation in Poly(3-hexylthiophene) Field Effect Transistors: Bulk to Interface

Byoungnam Park, Avishek Aiyar, Min Sang Park, Mohan Srinivasarao, more

The Journal of Physical Chemistry C > 2011 > 115 > 23 > 11719 - 11726

article

A Simple Method for Obtaining the Information of Orientation Distribution Using Polarized Raman Spectroscopy: Orientation Study of Structural Units in Poly(lactic acid)

Min Sang Park, Yee Shan Wong, Jung Ok Park, Subbu S. Venkatraman, more

Macromolecules > 2011 > 44 > 7 > 2120 - 2131

chapter

New investigation of hot carrier degradation of RF small-signal parameters in high-k/metal gate nMOSFETs

Hyun Chul Sagong, Chang Yong Kang, Chang-Woo Sohn, Min Sang Park, more

2011 International Reliability Physics Symposium > 5A.4.1 - 5A.4.5

2011 IEEE International Reliability Physics Symposium (IRPS 2011)

Hot carrier effects on RF small-signal parameters in high-k/metal gate nMOSFETs are characterized by DC and RF measurements. To explain the novel hot carrier-induced degradation, we suggest a modified surface channel resistance model that can be applied to both conventional SiO₂ and high-k nMOSFETs.

chapter

Low-frequency noise behavior of La-doped HfSiON/metal gate nMOSFETs

Do-Young Choi, Min Sang Park, Chang Woo Sohn, Hyun Chul Sagong, more

2011 International Reliability Physics Symposium > XT.1.1 - XT.1.5

2011 IEEE International Reliability Physics Symposium (IRPS 2011)

We investigate the low-frequency noise characteristics of HfSiON/metal gate nMOSFETs with and without La-doping and report new findings on the impact of La-doping on low-frequency noise of the nMOSFETs. The La-doped devices show lower noise intensity than the un-doped devices and it is attributed to the reduced trap density (N_t) and tunneling attenuation length (λ) caused by the La-doping. In the...

chapter

A 40nm 2Gb 7Gb/s/pin GDDR5 SDRAM with a programmable DQ ordering crosstalk equalizer and adjustable clock-tracking BW

Seung-Jun Bae, Young-Soo Sohn, Tae-Young Oh, Si-Hong Kim, more

2011 IEEE International Solid-State Circuits Conference > 498 - 500

2011 IEEE International Solid- State Circuits Conference (ISSCC 2011)

Most DRAM interfaces such as GDDR5 and DDR3 use parallel single-ended signaling due to pin-count restriction and backward compatibility. Notwithstanding poor signal and power integrity issues, GDDR5 speed reached beyond 5Gb/s in recent years by utilizing data bus inversion, error-detection coding, data training and channel equalization. However, channel crosstalk is becoming a major barrier to further...

article

Analysis of Abnormal Upturns in Capacitance–Voltage Characteristics for MOS Devices With High- $k$ Dielectrics

Chang-Woo Sohn, Hyun Chul Sagong, Eui-Young Jeong, Do-Young Choi, more

IEEE Electron Device Letters > 2011 > 32 > 4 > 434 - 436

In this letter, we analyze the nonsaturating upturns of capacitance under strong accumulation bias in MOS capacitors with high-k dielectrics. By comparing the electrical properties of dielectric samples with and without HfO₂ and by varying the ambient temperature, it is found that the conduction through the shallow trap levels in the HfO₂ bulk produces not only a steady-state current but also a dynamic...

article

A 7 Gb/s/pin 1 Gbit GDDR5 SDRAM With 2.5 ns Bank to Bank Active Time and No Bank Group Restriction

Tae-Young Oh, Young-Soo Sohn, Seung-Jun Bae, Min-Sang Park, more

IEEE Journal of Solid-State Circuits > 2011 > 46 > 1 > 107 - 118

This paper describes a 1 Gbit GDDR5 SDRAM with enhanced bank access flexibility for efficient data transfer in 7 Gb/s per pin IO bandwidth. The enhanced flexibility is achieved by elimination of bank group restriction and reduction of bank to bank active time to 2.5 ns. The effectiveness of these key features is verified by system model simulation including memory and its controller. To realize the...

chapter

An equivalent circuit model for high-k/metal gate stack MOS capacitor with dynamic leakage

Chang-Woo Sohn, Eui-Young Jeong, Hyun Chul Sagong, Do-Young Choi, more

2010 IEEE Nanotechnology Materials and Devices Conference > 291 - 294

2010 IEEE Nanotechnology Materials and Devices Conference (NMDC 2010)

This paper presents a simple equivalent circuit model to characterize a gate impedance of MOS capacitor with high-k dielectric, which exhibited significant dynamic leakage. Series of RC-shunts was added to consider the effects of charge trapping in high-k dielectric. From our model, it is found that two-frequency method using the megahertz range gives us reasonable values for the gate capacitance...

chapter

Reliability properties in sub-50nm high performance high-k/metal gate stacks SiGe pMOSFETs

Min Sang Park, Chang Yong Kang, Do-Young Choi, Chang-Woo Sohn, more

2010 IEEE Nanotechnology Materials and Devices Conference > 38 - 41

2010 IEEE Nanotechnology Materials and Devices Conference (NMDC 2010)

We present the reliabilities in compressively strained SiGe channel pMOSFETs. A Si capping layer in SiGe channel pMOSFETs improved the negative bias temperature instability (NBTI) without device performance degradation. Also, the Si capped device exhibits the better NBTI reliability than the Si channel device. Because a Si capped structure forms the double barrier layer in the interface, it is the...

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LOGIC GATES (11)
MOSFET (11)
HIGH-K DIELECTRIC THIN FILMS (9)
MOSFETS (8)
DIELECTRICS (7)
HAFNIUM COMPOUNDS (7)
CAPACITANCE (6)
DRAM CHIPS (6)
RELIABILITY (5)
STRESS (5)
JITTER (4)
RADIO FREQUENCY (4)
RANDOM ACCESS MEMORY (4)
SEMICONDUCTOR DEVICE RELIABILITY (4)
BANDWIDTH (3)
CLOCKS (3)
DEGRADATION (3)
GDDR5 SDRAM (3)
HIGH K DIELECTRIC MATERIALS (3)
HOT CARRIERS (3)
HUMAN COMPUTER INTERACTION (3)
MOS DEVICES (3)
SILICON COMPOUNDS (3)
STRAIN ENGINEERING (3)
TEMPERATURE DISTRIBUTION (3)
ANNEALING (2)
BANK GROUP (2)
CALIBRATION (2)
CAPPING LAYER (2)
COMPUTER ARCHITECTURE (2)
COPPER (2)
CRYOGENIC ELECTRONICS (2)
CURRENT GAIN CUTOFF FREQUENCY (2)
DATA BUS INVERSION (2)
DATA TRAINING (2)
DELAY (2)
DENSITY FUNCTIONAL THEORY (2)
EQUIVALENT CIRCUITS (2)
FLUCTUATIONS (2)
FREQUENCY MEASUREMENT (2)
GDDR4 GRAPHICS DRAM (2)
GE-SI ALLOYS (2)
GENERATORS (2)
HAFNIUM OXIDE (2)
HCI (2)
HFO<INF>2</INF> (2)
HFO₂ (2)
HFO₂-SIO₂ (2)
HIGH PRESSURE HYDROGEN ANNEALING (2)
HIGH-K (2)
HIGH-K GATE DIELECTRICS (2)
HOT CARRIER EFFECTS (2)
HPDLC (2)
HYDROGEN (2)
HYDROGEN PASSIVATION (2)
INTEGRATED CIRCUIT MODELING (2)
LOW TEMPERATURE (2)
LOW-POWER ELECTRONICS (2)
METAL GATE-HIGH-K DIELECTRIC NMOSFET (2)
METALS (2)
MICROPROCESSORS (2)
MOS CAPACITORS (2)
MOSFET CIRCUITS (2)
PASSIVATION (2)
PEAK-TO-PEAK JITTER (2)
PERFORMANCE EVALUATION (2)
POLYURETHANE ACRYLATE (2)
RADIOFREQUENCY INTEGRATED CIRCUITS (2)
RESISTANCE (2)
RF (2)
RF CHARACTERISTICS (2)
SDRAM (2)
SEMICONDUCTOR DEVICE MEASUREMENT (2)
SEMICONDUCTOR DEVICE NOISE (2)
SILICON (2)
SILICON GERMANIUM (2)
SIZE 50 NM (2)
SKEWED CONTROL LOGIC (2)
SOLIDS (2)
THROUGH-SILICON VIAS (2)
TIME 2.5 NS (2)
TUNNELLING (2)
VPP GENERATOR (2)
1-F NOISE MODEL (1)
1/F NOISE (1)
21 PS (1)
32 BIT (1)
512 MBIT (1)
68 MV (1)
80 NM (1)
${\RM V} {\RM REF}$ CALIBRATION (1)
ACTIVE JITTER CANCELER (1)
ACTIVE JITTER CANCELLER (1)
ADAPTIVE REFRESH (1)
ADJUSTABLE CLOCK-TRACKING BW (1)
AMORPHOUS-INDIUM-GALLIUM-ZINC-OXIDE (A-IGZO) (1)
AMPLIFIERS (1)
ANALOG MAJORITY VOTER (1)
ANODE (1)
ANTIMONY (1)
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IEEE Electron Device Letters (4)
IEEE Journal of Solid-State Circuits (3)
Microelectronic Engineering (2)
SID Symposium Digest of Technical Papers (2)
Applied Surface Science (1)
Carbon (1)
Current Applied Physics (1)
Journal of Membrane Science (1)
Journal of Power Sources (1)
Macromolecules (1)
Polymer (1)
The Journal of Physical Chemistry C (1)
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INFONA - science communication portal

Search results for: Min Sang Park

84‐5: Late‐News‐Paper: Flexible Cover Window Film with Improved Optical Clarity

60‐4: Mechanically Robust High‐Performance Flexible Oxide TFTs with Imbedded Buried CNT Electrode for Bendable Displays

Cu–SnO2 nanostructures obtained via galvanic replacement control as high performance anodes for lithium-ion storage

Highly permeable and mechanically durable forward osmosis membranes prepared using polyethylene lithium ion battery separators

Copper–antimony–red phosphorus composites as promising anode materials for sodium-ion batteries

Mechanism of sodium adsorption on N-doped graphene nanoribbons for sodium ion battery applications: A density functional theory approach

A 1.2 V 20 nm 307 GB/s HBM DRAM With At-Speed Wafer-Level IO Test Scheme and Adaptive Refresh Considering Temperature Distribution

18.2 A 1.2V 20nm 307GB/s HBM DRAM with at-speed wafer-level I/O test scheme and adaptive refresh considering temperature distribution

Reliability study of methods to suppress boron transient enhanced diffusion in high-k/metal gate Si/SiGe channel pMOSFETs

An Investigation of Abnormal Program Phenomena with S/D Junctions and Dopant Profiles for Sub-20 nm NAND Flash Memory Devices

A comparative study of depth profiling of interface statesusing charge pumping and low frequency noise measurement in SiO2/HfO2 gate stack nMOSFETs

Conducting Channel Formation in Poly(3-hexylthiophene) Field Effect Transistors: Bulk to Interface

A Simple Method for Obtaining the Information of Orientation Distribution Using Polarized Raman Spectroscopy: Orientation Study of Structural Units in Poly(lactic acid)

New investigation of hot carrier degradation of RF small-signal parameters in high-k/metal gate nMOSFETs

Low-frequency noise behavior of La-doped HfSiON/metal gate nMOSFETs

A 40nm 2Gb 7Gb/s/pin GDDR5 SDRAM with a programmable DQ ordering crosstalk equalizer and adjustable clock-tracking BW

Analysis of Abnormal Upturns in Capacitance–Voltage Characteristics for MOS Devices With High- $k$ Dielectrics

A 7 Gb/s/pin 1 Gbit GDDR5 SDRAM With 2.5 ns Bank to Bank Active Time and No Bank Group Restriction

An equivalent circuit model for high-k/metal gate stack MOS capacitor with dynamic leakage

Reliability properties in sub-50nm high performance high-k/metal gate stacks SiGe pMOSFETs

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