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A feedback topology low-noise amplifier (LNA) using advanced SiGe HBT technology for application in ultra-wideband (UWB) systems is presented in this paper. The design consists of single stage topology in two feedback loops to achieve broadband gain together with low noise figure (NF) and good input and output impedance match. Using 0.35 mum SiGe HBT process, the simulated results show 11.9 dB of...
A design methodology of Darlington low noise figure (LNA) for application at ultra wide bandwidth using a resistive feedback scheme is proposed. The packaged SiGe heterojunction bipolar transistors (HBTs) BFP740 and chip type passive components were used for this direct-coupled LNA. The Darlington amplifier has high gain of 20 dB with variation of 0.5 dB over 3.1-6 GHz, which is twice of single stage...
This paper proposes the layout design of multi-finger power SiGe HBTs with non-uniform finger spacing to improve the thermal stability. Two types of 20-finger SiGe HBTs with uniform and non-uniform finger spacing are fabricated. Experimental results shown that, for the HBT with non-uniform finger spacing, the power level for thermal regression is 22.8% higher than that of the uniform one, which contributes...
An effective method for enhancing thermal stability of a multi-emitter power heterojunction bipolar transistor (HBT) has been presented. The method employs the segmented emitter structure rather than the traditional non-segmented structure to suppress the junction temperature rise and reduce the thermal resistance. A suitable thermal model, which includes various thermal resistances of the different...
For power bipolar transistors, the emitter-ballasting-resistor is usually used to improve the thermal stability. However, the ballasting-resistor degrades the output power, power gain, power-added efficiency (PAE) of the transistor. In this paper, the thermal stability can be improved substantially by adjusting either the spacing or length of the emitter fingers without using ballasting resistors...
For power bipolar transistors, the emitter-ballasting-resistor is usually used to improve the thermal stability. However, the ballasting-resistors degrade the output power, power gain, power-added-efficiency (PAE) of the transistor. In this paper, the thermal stability can be improved substantially by adjusting either the spacing or length of the emitter fingers without using ballasting resistors...
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