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4H silicon carbide Schottky diodes were irradiated by 550keV protons with the aim to place the ion range into the low-doped n-type epitaxial layer. The diodes were characterized using DLTS, C–V profiling and forward I–V curves. Calibration procedure of model parameters for device simulation has been carried out. It is based on modeling the doping compensation of the n-type epitaxial layer caused by...
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