The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
AlGaN/GaN HEMTs with a gate length of 0.125 µm were stressed at Class AB condition, 10 GHz under 3 dB compression for up to 350 hours. Devices exhibited excellent RF stability up to a drain bias of 20 V. Rapid degradation was observed for a drain bias of 25 V. Substantial Schottky contact degradation was observed for all three bias conditions. Electroluminescence indicates localized points of failure...
GaN High Electron mobility transistors (HEMTs) were electrically step-stressed under high reverse gate bias conditions. Once a threshold voltage is reached, gate current increases about two orders of magnitude. Though critical voltage was determined to be linear with increasing gate length, electrical simulations show that the maximum electric field was similar at the critical voltage (~2 MV.cm-1)...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.