The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper reports on the design and experimental verification of the first prototype of a resonant sensing platform based on nanoscaled aluminum nitride Contour-Mode Resonant Sensors (CMR-S) for selective detection of sub-ppb levels of volatile organic chemicals (VOCs). For the first time arrays of 8 nano-CMR-S were fabricated on the same chip and functionalized with two different thiol-terminated...
For the first time, this work demonstrates a switch-less dual-frequency (472-MHz and 1.94-GHz) reconfigurable CMOS oscillator using a single piezoelectric AlN MEMS resonator with co-existing S0 and S1 Lamb-wave modes of vibration. High performances (high Q and kt2 for a resonator and low phase noise for an oscillator) have been achieved for both the resonator and oscillator in terms of dual-mode operation...
This paper reports on the design and experimental verification of a new class of thin-film (250 nm) superhigh- frequency laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions to excite a contour-extensional...
This paper reports on the first implementation of low voltage complementary logic (?? 1.5 V) by using body-biased aluminum nitride (AlN) piezoelectric MEMS switches. For the first time, by using opposite body biases the same mechanical switch has been made to operate as both an n-type and p-type (complementary) device. Body-biasing also gives the ability to precisely tune the threshold voltage of...
This paper presents the first design and demonstration of a novel inverse acoustic band gap (IABG) structure in aluminum nitride (AlN) and its direct integration with piezoelectric contour-mode transducers. The experimental results indicate that the IABG structure has a stop band from 185 MHz to 240 MHz and is centered around 219 MHz with maximum rejection of 30 dB. The ABG-induced phonon scattering...
This paper reports the first implementation of ultra thin (100 nm) aluminum nitride (AlN) piezoelectric layers for the fabrication of vertically deflecting nano-actuators. An average piezoelectric coefficient (d31~ - 1.9 pC/N) that is comparable to its microscale counterpart has been demonstrated in nanoscale thin AlN films. Vertical deflections as large as 40 nm have been obtained in 18 mum long...
This paper presents the first design and demonstration of a novel inverse acoustic band gap (IABG) structure in aluminum nitride (AlN) and its direct integration with contour-mode wideband transducers in the Very High Frequency (VHF) range. This design implements an efficient approach to co-fabricate in-plane AlN electro-acoustic transducers with bulk acoustic waves (BAWs) IABG arrays (10 times 10)...
This paper reports on the first demonstration of multi-frequency (176, 222, 307, and 482 MHz) oscillators based on piezoelectric AlN contour-mode MEMS resonators. All the oscillators show phase noise values between -88 and -68 dBc/Hz at 1 kHz offset and phase noise floors as low as -160 dBc/Hz at 1 MHz offset. The same Pierce circuit design is employed to sustain oscillations at the 4 different frequencies,...
This paper reports experimental results on a new class of single-chip multi-frequency channel-select filters based on self-coupled aluminum nitride (AlN) contour-mode piezoelectric resonators. For the first time, two-port AlN contour- mode resonators are connected in series and electrically coupled using their intrinsic capacitance to form multi-frequency (94 -271 MHz), narrow bandwidth (~ .3%), low...
This paper reports on a new class of piezoelectric aluminun nitride contour-mode vibrating RF MEMS that have demonstrated low motional resistance, high quality factors and multiple frequencies of operation on the same silicon substrate. These resonators have been arranged in electrically or mechanically coupled arrays to form low-loss band pass filters particularly fit for IF bands used in commercial...
This paper reports theoretical analysis and experimental results on a new class of rectangular plate and ring-shaped contour-mode piezoelectric aluminum nitride radio-frequency microelectromechanical systems resonators that span a frequency range from 19 to 656 MHz showing high-quality factors in air (Qmax=4300 at 229.9 MHz), low motional resistance (ranging from 50 to 700 Omega), and center frequencies...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.