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This brief presents a new design technique for high-efficiency CMOS millimeter-wave power amplifiers (PAs) and the implementations of a two-stage moderate-power PA, a three-stage high-power PA, and a transmitter all working over 68–78 GHz. The proposed PAs adopt nMOS capacitors connected at the gates of the transistors of the last one or two amplifying stages to compensate for the gate capacitance...
This paper presents a new design technique for high-efficiency CMOS mmWave power amplifier (PA). The proposed PA adopts NMOS capacitors connected at the gates of the transistors of the last amplifying stage to compensate gate capacitance variation over large signal swing, improving the linearity and the power efficiency. Implemented in 65 nm CMOS process, the presented PA consists of two differential...
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