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ZnO thin films are first deposited on n-type silicon by radio frequency (rf) magnetron sputtering at room temperature. And high-K HfO2 gate dielectrics thin films are deposited on ZnO films to form metal-oxide semiconductor (MOS) capacitors. The temperature to fabricate ZnO MOS capacitors is 400°C, and the low temperature process is applicable for thin film transistors, flat-panel display (FPD), flexible...
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