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Summary form only given. A new method of post-growth intermixing of GaAs-AlGaAs multiple quantum wells (MQWs) has been developed. This new technique of impurity-free vacancy induced disordering is area-selective, very reliabile and high reproducible. The surface of the sample is coated with a thin film of spin-on-glass (silicon oxide) and pre-baked for 30 min, at 4000/spl deg/C. Rapid thermal annealing...
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