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We demonstrate three-dimensional simulation of a third order silicon-based grating with full-width-half-maximum (FWHM) reflection bandwidth of 4nm. This provides more than 2 orders of magnitude improvement over a conventional side-walled grating structure. The relationship of grating performance over the infra-red wavelength range is also presented.
Silicon bipolar transistors with current gain as high as 80 at 77 K are described. ECL (emitter-coupled-logic) circuits using these transistors are operational at low temperatures with no degradation in circuit speed observed until about 165 K as compared to its speed at a typical system operating temperature of 358 K (85 degrees C). The key design and performance issues for low-temperature operation...
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