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A new Schottky barrier (SB) nonvolatile nanowire memory is reported experimentally with efficient low-voltage programming and erasing. By applying an SB source/drain to enhance the electrical field in the silicon gate-all-around nanowire, the nonvolatile silicon–oxide-nitride-oxide-silicon (SONOS) memory can operate at gate voltages of 5 to 7 V for programming and 7 to 9 V for erasing through Fowler–Nordheim...
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