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Damage-less full molecular-pore-stack SiOCH (MPS) / Cu interconnect is developed to reduce effective k-value (keff). MPS with high endurance against plasma processes is introduced into both via and trench dielectrics without hard mask (HM). Low friction slurry and chemical modification of MPS surface by He-plasma treatment suppress defect generation during direct CMP of the MPS surface. The full-MPS...
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